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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

ACSP: MOSFET TCHNLGS DBL-PL FOUR-THRW RDO-FRQNCY SWITCH

Physics

Mathematics & Science

Gt Product Group

Binding Format

Marketing Imprint Name

B2B GT

CL Carton Count

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B2B & B2C

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

POST SECONDARY FOUR YEAR

PROFESSIONAL & REFERENCE

COLFR

COLJR

COLSO

COLSR

Duration

Duration Unit Of Measure

Transaction Type

Front Cover.
Other Frontmatter.
Title Page.
Copyright Page.
Contents.
List of Figures.
List of Tables.
Abstract.
1: Introduction.
2: Design of Double-Pole Four-Throw RF Switch.
3: Design of Double-Gate MOSFET.
4: Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.
5: Cylindrical Surrounding Double-Gate RF MOSFET.
6: Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.
7: Testing of MOSFETs Surfaces Using Image Acquisition.
8: Conclusions and Future Scope.
Appendix A: List of Symbols.
Appendix B: List of Definitions.
Appendix C: Outcomes of the Book.
About the Authors.
Index.

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch.css-1p8rvzy{position:absolute;padding-left:8px;}

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch