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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

SBMS: GRWTH MCHNSMS & NVL PRPRT SILICON NANOSTRUCTURES

Physics

Mathematics & Science

Gt Product Group

Binding Format

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B2B GT

CL Carton Count

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B2B & B2C

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

POST SECONDARY FOUR YEAR

COLFR

COLJR

COLSO

COLSR

Duration

Duration Unit Of Measure

Transaction Type

Front Cover.
Other Frontmatter.
Title Page.
Copyright Page.
Foreword.
Contents.
1: Introduction.
2: Growth Mechanism of Silicon Nanowires.
3: Stability of Silicon Nanostructures.
4: Novel Electronic Properties of Silicon Nanostructures.
5: Summary and Remarks.

Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations.css-1p8rvzy{position:absolute;padding-left:8px;}

Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations