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Novel Three-state Quantum Dot Gate Field Effect Transistor

NOVEL THREE STATE QUANTUM DOT GATE FIELD EFFECT TRNSSTR

Engineering

Mathematics & Science

Gt Product Group

Binding Format

Marketing Imprint Name

B2B GT

CL Carton Count

Imprint Name

B2B & B2C

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.

POST SECONDARY FOUR YEAR

COLFR

COLSO

COLJR

COLSR

Duration

Duration Unit Of Measure

Transaction Type

Front Cover.
Half Title Page.
Title Page.
Copyright Page.
Dedication Page.
Preface.
Acknowledgments.
Contents.
1: Introduction: Multistate Devices and Logic.
2: Quantum Dot Gate Field-Effect Transistor: Device Structures.
3: Quantum Dot Gate Field-Effect Transistors: Fabrication and Characterization.
4: Quantum Dot Gate Field-Effect Transistors: Theory and Device Modeling.
5: Quantum Dot Gate NMOS Inverter.
6: Quantum Dot Gate Field-Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter.
7: Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum Dot Gate Field-Effect Transistor (QDGFET).
8: Performance in Sub-25-nm Range: Circuit Model, Ternary Logic Gates and ADC/DAC.
9: Conclusions.
About the Author.
Index.

Novel Three-state Quantum Dot Gate Field Effect Transistor.css-1p8rvzy{position:absolute;padding-left:8px;}

Novel Three-state Quantum Dot Gate Field Effect Transistor