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FRONTIERS ELCTRNCS: PROCEEDINGS OF THE WOFIE 09

Engineering

Mathematics & Science

Electrical Engineering

Gt Product Group

Binding Format

Marketing Imprint Name

B2B GT

CL Carton Count

Imprint Name

B2B & B2C

Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.

Frontiers In Electronics

POST SECONDARY FOUR YEAR

COLFR

COLSO

COLJR

COLSR

Duration

Duration Unit Of Measure

Transaction Type

Front Cover.
Half Title Page.
Selected Topics in Electronics and Systems.
Title Page.
Copyright Page.
Preface.
Contents.
1: Advanced Terahertz and Photonics Devices.
2: Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics.
3: How Do We Lose Excitation in the Green?.
4: Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation.
5: Progress in Development of Room Temperature CW GaSb Based Diode Lasers for 2-3.5 &#x03BC;M Spectral Region.
6: WDM Demultiplexing by Using Surface Plasmon Polaritons.
7: Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs.
8: Connecting Electrical and Structural Dielectric Characteristics.
9: Advanced Solutions for Mobility Enhancement in SOI MOSFETs.
10: Electron Scattering in Buried InGaAs/High-K MOS Channels.
11: Low Frequency Noise and Interface Density of Traps in InGaAs MOSFETs with GdScO3 High-K Dielectric.
12: Low-Power Biomedical Signal Monitoring System for Implantable Sensor Applications.
13: Nanomaterials and Nanodevices.
14: III-V Compound Semiconductor Nanowires for Optoelectronic Device Applications.
15: Electron Heating in Quantum-Dot Structures with Collective Potential Barriers.
16: Electronic Structure of Graphene Nanoribbons Subjected to Twist and Nonuniform Strain.
17: Low-Frequency Electronic Noise in Graphene Transistors: Comparison with Carbon Nanotubes.
18: ZnO Nanocrystalline High Performance Thin Film Transistors.
19: Zinc Oxide Nanoparticles for Ultraviolet Photodetection.
20: Carbon-Based Nanoelectromechanical Devices.
21: Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope.
22: Wide Band Gap Technology for High Power and UV Photonics.
23: Novel Approaches to Microwave Switching Devices Using Nitride Technology.
Author Index.

Frontiers In Electronics.css-1p8rvzy{position:absolute;padding-left:8px;}

Frontiers In Electronics