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FRONTIERS ELCTRNCS: ADV MODLNG OF NANOSCALE ELECTRN DEV

Nanotechnology

Mathematics & Science

Gt Product Group

Binding Format

Marketing Imprint Name

B2B GT

CL Carton Count

Imprint Name

B2B & B2C

This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.

Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices

Post Secondary Four Year

College Freshman

College Junior

College Sophomore

College Senior

Frontiers In Electronics

Duration

Duration Unit Of Measure

Transaction Type

Front Cover.
Half Title Page.
Other Frontmatter.
Title Page.
Copyright Page.
Preface.
Contents.
1: Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs.
2: Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi Ballistic Regime.
3: Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs.
4: Compact Modeling of Double and Tri-Gate MOSFETs.
Author Index.

Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices.css-1p8rvzy{position:absolute;padding-left:8px;}

Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices