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Chemistry

Mathematics & Science

Gt Product Group

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Marketing Imprint Name

B2B GT

CL Carton Count

Imprint Name

B2B & B2C

Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field.  Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

Bismuth-Containing Compounds

POST SECONDARY FOUR YEAR

COLFR

COLJR

COLSO

COLSR

SSMS: BISMUTH CONTAINING COMPOUNDS

Duration

Duration Unit Of Measure

Transaction Type

Front Cover.
Half Title Page.
Other Frontmatter.
Title Page.
Copyright Page.
Preface.
Contents.
Contributors.
1: Dilute Bismides for Mid-IR Applications.
2: Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications.
3: Theory of the Electronic Structure of Dilute Bismide Alloys: Tight-Binding and K &#x00B7; P Models.
4: Dilute Bismuthides on an InP Platform.
5: Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate.
6: Group III&#x2013;V Bismide Materials Grown by Liquid Phase Epitaxy.
7: Spectroscopic Ellipsometry of AP-MOVPE-Grown GaAs1&#x2212;xBix Dilute Alloys.
8: Effect of Bismuth Alloying on the Transport Properties of the Dilute Bismide Alloy, GaAs1&#x2212;xBix.
9: Localized States in GaAsBi and GaAs/GaAsBi Heterostructures.
10: Unusual Bi-Containing Surface Layers of III&#x2013;V Compound Semiconductors.
11: MBE Growth of Thin Hexagonal Films Bi2Te3, Bi2Se3, and Their Alloys on Cubic GaAs (001) Substrates.
12: Vapor Phase Deposition Synthesis of Bismuth- Based Topological Insulator Nanoplates and Their Electrostatic Properties.
13: Electronic and Optical Properties of Domain Walls and Phase Boundaries in Bismuth Ferrite.
14: Syntheses and Properties of Some Bi-Containing Compounds with Noncentrosymmetric Structure.
15: Bismuth(V)-Containing Semiconductor Compounds and Applications in Heterogeneous Photocatalysis.
Index.

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Bismuth-Containing Compounds